葡京集团app官网_葡京集团网站app_欢迎您

The investigations to eliminate the bias dependency of quantum efficiency...
Computational prediction of a novel 1D InSeI nanochain with high stabilit...
Multi-view frontal face image generation: A survey
Electronic structures and band alignment transition in double-wall MoS2/W...
High Extinction Ratio Polarization Beam Splitter Realized by Separately C...
Multistate Logic Inverter Based on Black Phosphorus/SnSeS Heterostructure...
Polarization-Selective Bidirectional Absorption Based on a Bilayer Plasmo...
Recognition of distorted QR codes with one missing position detection pat...
Fourth-harmonic-generation of 266-nm ultraviolet nanosecond laser with Na...
Ultra-compact low-loss variable-ratio 1x2 power splitter with ultra-low p...
官方微信
友情链接

Computational prediction of a novel 1D InSeI nanochain with high stability and promising wide-bandgap properties

2021-01-07

 

Author(s): Jiang, SJ (Jiang, Shujuan); Yin, HB (Yin, Huabing); Zheng, GP (Zheng, Guang-Ping); Wang, B (Wang, Bing); Guan, S (Guan, Shan); Yao, BJ (Yao, Bing-Jian)

Source: PHYSICAL CHEMISTRY CHEMICAL PHYSICS Volume: 22 Issue: 46 Pages: 27441-27449 DOI: 10.1039/d0cp04922k Published: DEC 14 2020

Abstract: Low-dimensional materials have aroused widespread interest for their novel and fascinating properties. Based on first-principles calculations, we predict the one-dimensional (1D) InSeI nanochains with van der Waals (vdW) interchain interactions, which could be exfoliated mechanically and kept at steady states at room temperature. Compared with bulk InSeI, the single nanochain InSeI has a larger direct bandgap of 3.15 eV. Its calculated carrier mobility is as high as 54.17 and 27.49 cm(2) V-1 s(-1) for holes and electrons, respectively, comparable with those of other 1D materials. In addition, a direct-to-indirect bandgap transition is implemented under a small applied strain (similar to 6%). More importantly, the nanochains are found to be promising candidates for optoelectronic devices since they possess a high absorption coefficient of similar to 10(5) cm(-1) in the ultraviolet region. The results thus pave a novel avenue for the applications of InSeI nanochains with excellent thermal stability in nanoelectronic and optoelectronic devices.

Accession Number: WOS:000597256600073

PubMed ID: 33232408

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Yin, Huabing                  0000-0001-5250-2430

ISSN: 1463-9076

eISSN: 1463-9084

Full Text: https://pubs.rsc.org/en/content/articlelanding/2020/CP/D0CP04922K#!divAbstract



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 葡京集团app官网

备案号:京ICP备05085259号 京公网安备110402500052 中国科学院半导体所声明

Baidu
sogou