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Interference rings induced by ultrafast laser pulse in GaAs crystal

2021-01-07

 

Author(s): Shang, LL (Shang Ling-Ling); Qian, X (Qian Xuan); Sun, TJ (Sun Tian-Jiao); Ji, Y (Ji Yang)

Source: ACTA PHYSICA SINICA Volume: 69 Issue: 21 Article Number: 214202 DOI: 10.7498/aps.69.20201055 Published: NOV 5 2020

Abstract: Gallium arsenide (GaAs) is an important semiconductor material with direct bandgap and clear-cut absorption edge. High-quality crystal is available, which has excellent performances in the field of high power transmission and luminescence because of high laser damage threshold and high thermal conductivity. Nonlinear optics is of great significance for developing the laser technology, spectroscopy, and optoelectronic devices. The Z-scan technology is a nonlinear measurement method based on the analysis of single beam transmittance. Previous studies mainly focused on the measurement of the nonlinear absorption coefficient of the sample by open-aperture configuration of Z-scan and the nonlinear refractive index of the sample by shut-aperture configuration of Z-scan. We build a dual-channel Z-scan system with variable optical path difference, equipped together with a high speed camera, to observe the spatial distribution of transmitted light. Besides, we find the interference rings induced by nonlinear absorption in semiconductor GaAs crystals. Using three kinds of lasers (continuous-wave laser, 80 MHz femtosecond pulsed laser, 1 kHz femtosecond pulsed laser) to illuminate the GaAs crystal separately, multi-level interference rings come out only when a GaAs crystal wafer is illuminated by a femtosecond pulsed laser. In the single-channel Z-scan experiment, we observe that the interference rings contract or expand regularly when changing pulsed laser intensity incident on the surface of GaAs crystal. The higher the intensity of pulse, the more interference rings appear, and the maximum exiting angle becomes larger. Nonlinear effect of high intensity femtosecond pulsed laser locally changes the refractive index of GaAs crystals, resulting in optical path difference (Kerr lens effect). However, the Kerr lens generated by ultrafast light pulse in GaAs crystal cannot focus a beam as done by an ideal thin lens, leading the transmitted light to form interference rings instead. By analyzing the variation of the interference rings, the nonlinear absorption coefficient and refractive index of GaAs crystal can be obtained. In the dual-channel Z-scan experiment, different interference rings are induced in the GaAs crystal as the path difference between the two pulses changes, as done by the nonlinear transmission power. Thus we obtain the formation time of the interference rings and ascribe it to the ultrafast relaxation process of GaAs carriers.

Accession Number: WOS:000595932500007

ISSN: 1000-3290

Full Text: http://wulixb.iphy.ac.cn/article/doi/10.7498/aps.69.20201055



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